BTB Tunneling In InAs/Si Heterojunctions

被引：0
|
作者：
Filipovic, Lidija [1 ]
Baumgartner, Oskar [1 ]
Stanojevic, Zlatan [1 ]
Kosina, Hans [1 ]
机构：
[1] TU Wien, Inst Microelect, A-1040 Vienna, Austria
来源：
2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This works presents a study of the location of 3D band-to-band tunneling barriers in order to create improved tunneling devices. Specifically, the i-Si / n-InAs junction is considered. The large lattice mismatch in this material system causes dislocations in the interface and traps in the bandgap. Alternative device configurations are considered that move the tunneling away from the physical interface, therefore reducing the the effects of lattice mismatch on tunneling current.
引用
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页码：245 / 248
页数：4
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