Phase change materials and phase change memory

被引:398
|
作者
Raoux, Simone [1 ]
Xiong, Feng [2 ]
Wuttig, Matthias [3 ,4 ]
Pop, Eric [2 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Nanospect Energy Mat Design & Optimizat, Berlin, Germany
[2] Stanford Univ, Stanford, CA 94305 USA
[3] Rhein Westfal TH Aachen, Inst Phys, Aachen, Germany
[4] Rhein Westfal TH Aachen, Julich Aachen Res Alliance Fundamentals Future In, Aachen, Germany
基金
美国国家科学基金会;
关键词
RANDOM-ACCESS MEMORY; STORAGE; GE2SB2TE5; FILMS;
D O I
10.1557/mrs.2014.139
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Phase change memory (PCM) is an emerging technology that combines the unique properties of phase change materials with the potential for novel memory devices, which can help lead to new computer architectures. Phase change materials store information in their amorphous and crystalline phases, which can be reversibly switched by the application of an external voltage. This article describes the advantages and challenges of PCM. The physical properties of phase change materials that enable data storage are described, and our current knowledge of the phase change processes is summarized. Various designs of PCM devices with their respective advantages and integration challenges are presented. The scaling limits of PCM are addressed, and its performance is compared to competing existing and emerging memory technologies. Finally, potential new applications of phase change devices such as neuromorphic computing and phase change logic are outlined.
引用
收藏
页码:703 / 710
页数:8
相关论文
共 50 条
  • [1] Phase change materials and phase change memory
    Simone Raoux
    Feng Xiong
    Matthias Wuttig
    Eric Pop
    [J]. MRS Bulletin, 2014, 39 : 703 - 710
  • [2] Phase-change memory materials
    Kraft, Arno
    [J]. CHEMISTRY & INDUSTRY, 2022, 86 (01) : 43 - 43
  • [3] Nanoscale phase change memory materials
    Caldwell, Marissa A.
    Jeyasingh, Rakesh Gnana David
    Wong, H-S Philip
    Milliron, Delia J.
    [J]. NANOSCALE, 2012, 4 (15) : 4382 - 4392
  • [4] Phase change memory materials and their applications
    Kozyukhin, Sergey A.
    Lazarenko, Petr, I
    Popov, Anatoliy, I
    Eremenko, Igor L.
    [J]. RUSSIAN CHEMICAL REVIEWS, 2022, 91 (09)
  • [5] Characterization of phase change memory materials using phase change bridge devices
    Krebs, Daniel
    Raoux, Simone
    Rettner, Charles T.
    Burr, Geoffrey W.
    Shelby, Robert M.
    Salinga, Martin
    Jefferson, C. Michael
    Wuttig, Matthias
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (05)
  • [6] Phase Change Materials for Multi-level Storage Phase Change Memory
    Ren, Kun
    Rao, Feng
    Song, Zhitang
    Zhu, Min
    Gong, Yuefeng
    Wu, Liangcai
    Liu, Bo
    Feng, Songlin
    [J]. 2012 INTERNATIONAL WORKSHOP ON INFORMATION STORAGE AND NINTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE, 2013, 8782
  • [7] Phase transition characteristics of Al-Sb phase change materials for phase change memory application
    Zhou, Xilin
    Wu, Liangcai
    Song, Zhitang
    Rao, Feng
    Ren, Kun
    Peng, Cheng
    Song, Sannian
    Liu, Bo
    Xu, Ling
    Feng, Songlin
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (07)
  • [8] Potential fluctuations in phase change memory materials
    Bapanayya, Ch
    Gupta, Rajeev
    Agarwal, S. C.
    [J]. PHILOSOPHICAL MAGAZINE LETTERS, 2011, 91 (02) : 134 - 139
  • [9] Threshold field of phase change memory materials measured using phase change bridge devices
    Krebs, Daniel
    Raoux, Simone
    Rettner, Charles T.
    Burr, Geoffrey W.
    Salinga, Martin
    Wuttig, Matthias
    [J]. APPLIED PHYSICS LETTERS, 2009, 95 (08)
  • [10] Phase Change Memory
    Wong, H. -S. Philip
    Raoux, Simone
    Kim, SangBum
    Liang, Jiale
    Reifenberg, John P.
    Rajendran, Bipin
    Asheghi, Mehdi
    Goodson, Kenneth E.
    [J]. PROCEEDINGS OF THE IEEE, 2010, 98 (12) : 2201 - 2227