Potential fluctuations in phase change memory materials

被引：6
|
作者：
Bapanayya, Ch [1 ]
Gupta, Rajeev [1 ]
Agarwal, S. C. [1 ]
机构：
[1] Indian Inst Technol, Dept Phys, Mat Sci Programme, Kanpur 208016, Uttar Pradesh, India
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 2011年 / 91卷 / 02期
关键词：
chalcogenide glasses; crystallisation; electronic transport; phase changes; BOND CONSTRAINT THEORY; ELECTRONIC TRANSPORT; STATES; METASTABILITIES; MECHANISM; MODEL; GAP;
D O I：
10.1080/09500839.2010.541396
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Long-range potential fluctuations have been quantified in amorphous and crystallised thin films of a family of Ge-Sb-Te (GST) chalcogenide glasses. Among the compositions studied, the width of the potential fluctuations is the smallest for amorphous Ge2Sb2Te5. This is also the most robust material in terms of the number of write-erase cycles for GST films when used as phase change memory materials. A plausible explanation for this observation is given and a criterion for selecting suitable compositions in optical memory devices is proposed.
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页码：134 / 139
页数：6
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