Techniques for reliability analysis of MEMS RF switch

被引：27
|
作者：
DeNatale, J [1 ]
Mihailovich, R [1 ]
Waldrop, J [1 ]
机构：
[1] Rockwell Sci Co, Thousand Oaks, CA 91360 USA
来源：
40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM | 2002年
关键词：
D O I：
10.1109/RELPHY.2002.996620
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MEMS switch technology represents a key enabling element for advanced RF systems. These devices provide extremely low loss, high linearity, and broad bandwidth relative to traditional semiconductor switches. A significant impediment to fully realizing these benefits in deployed systems is their reliability under high cycle numbers. Due to their low force actuation and multi-physics operation, the reliability of MEMS contact switches may be impacted by a broad range of different mechanisms. Thus, a key component of the reliability improvement process is the separation and identification of reliability-limiting processes. A number of experimental methods have been developed to support these determinations, and the application of one permitting contact response measurement is presented.
引用
收藏
页码：116 / 117
页数：2
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