Modeling of Ballistic Carbon Nanotube Transistors by Neural Space Mapping

被引：0
|
作者：
Yousefi, R. [1 ]
Saghafi, K. [2 ]
机构：
[1] Islamic Azad Univ, Dept Elect Engn, Noor Branch, Noor, Iran
[2] Shahed Univ, Dept Elect Engn, Tehran, Iran
来源：
ICCEE 2008: PROCEEDINGS OF THE 2008 INTERNATIONAL CONFERENCE ON COMPUTER AND ELECTRICAL ENGINEERING | 2008年
关键词：
Carbon Nanotube; Neural Network; Neural Space Mapping;
D O I：
10.1109/ICCEE.2008.123
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper we present a Neural Space Mapping (NSM) SPICE-compatible modeling technique for carbon nanotubes in their ballistic limit. We modified conventional MOSFET equations and used NSM concept in order to correct these equations in the manner that to be usable to carbon nanotube transistors. We used Fettoy model (which is applicable to MOSCNT structures) to compare accuracy. We have shown that our model has reasonable accuracy at different biases and physical parameters.
引用
收藏
页码：165 / +
页数：2
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