Modeling of Ballistic Carbon Nanotube Transistors by Neural Space Mapping

被引：0
|
作者：
Yousefi, R. [1 ]
Saghafi, K. [2 ]
机构：
[1] Islamic Azad Univ, Dept Elect Engn, Noor Branch, Noor, Iran
[2] Shahed Univ, Dept Elect Engn, Tehran, Iran
来源：
ICCEE 2008: PROCEEDINGS OF THE 2008 INTERNATIONAL CONFERENCE ON COMPUTER AND ELECTRICAL ENGINEERING | 2008年
关键词：
Carbon Nanotube; Neural Network; Neural Space Mapping;
D O I：
10.1109/ICCEE.2008.123
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper we present a Neural Space Mapping (NSM) SPICE-compatible modeling technique for carbon nanotubes in their ballistic limit. We modified conventional MOSFET equations and used NSM concept in order to correct these equations in the manner that to be usable to carbon nanotube transistors. We used Fettoy model (which is applicable to MOSCNT structures) to compare accuracy. We have shown that our model has reasonable accuracy at different biases and physical parameters.
引用
收藏
页码：165 / +
页数：2
相关论文
共 50 条
  • [21] A circuit-compatible model of ballistic carbon nanotube field-effect transistors
    Raychowdhury, A
    Mukhopadhyay, S
    Roy, K
    IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2004, 23 (10) : 1411 - 1420
  • [22] Current transport modeling of carbon nanotube field effect transistors
    Srivastava, Ashok
    Marulanda, Jose M.
    Xu, Yao
    Sharma, Ashwani K.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2009, 206 (07): : 1569 - 1578
  • [23] Ballistic Transport Modeling in Advanced Transistors
    Khan, Muhammad Imran
    Buzdar, Abdul Rehman
    Lin, Fujiang
    2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
  • [24] Ballistic modeling of InAs nanowire transistors
    Jansson, Kristofer
    Lind, Erik
    Wernersson, Lars-Erik
    SOLID-STATE ELECTRONICS, 2016, 115 : 47 - 53
  • [25] Semi-analytical modeling of high performance nano-scale complementary logic gates utilizing ballistic carbon nanotube transistors
    Jooq, Mohammad Khaleqi Qaleh
    Mir, Ali
    Mirzakuchaki, Satar
    Farmani, Ali
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2018, 104 : 286 - 296
  • [26] Analytical Model for Ballistic MOSFET-like Carbon Nanotube Field-Effect Transistors
    Abdolkader, Tarek M.
    Yousry, Esam M.
    Fikry, Wael
    2013 SAUDI INTERNATIONAL ELECTRONICS, COMMUNICATIONS AND PHOTONICS CONFERENCE (SIECPC), 2013,
  • [27] Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors
    Guo, J
    Javey, A
    Dai, HJ
    Lundstrom, M
    IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, : 703 - 706
  • [28] Compact model for ballistic MOSFET-like carbon nanotube field-effect transistors
    Abdolkader, Tarek M.
    Fikry, Wael
    INTERNATIONAL JOURNAL OF ELECTRONICS, 2016, 103 (01) : 30 - 41
  • [29] Review of Neuro-Space Mapping Modeling for Packaged Transistors
    Yan, Shuxia
    Zhang, Shuang
    Dong, Xu
    2020 13TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETRE-WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT2020), 2020,
  • [30] Understanding the Frequency- and Time-Dependent Behavior of Ballistic Carbon-Nanotube Transistors
    Paydavosi, Navid
    Holland, Kyle David
    Zargham, M. Meysam
    Vaidyanathan, Mani
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2009, 8 (02) : 234 - 244
12345