Effects of different masks on GaAs microtips grown by selective liquid-phase epitaxy

被引：3
|
作者：
Zhang Hongzhi [1 ]
Hu Lizhong [1 ]
Tian Yichun [1 ]
Sun Xiaojuan [1 ]
Liang Xiuping [1 ]
Pan Shi [1 ]
机构：
[1] Dalian Univ Technol, State Key Lab Mat Modificat Laser Ion Elect Beams, Dept Phys, Key Lab Micronano Technol & Syst Liaoning Provinc, Dalian 116024, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2006年 / 295卷 / 01期
基金：
中国国家自然科学基金;
关键词：
scanning electron microscopy; liquid-phase epitaxy; GaAs microtips;
D O I：
10.1016/j.jcrysgro.2006.07.021
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We investigate the dependence of selective liquid-phase epitaxial growth of GaAs microtips on different masks, including SiO2 films deposited by liquid-phase deposition and magnetron sputtering separately, aluminium film prepared by vacuum evaporation, and AlGaAs film grown by liquid-phase epitaxy. Scanning electron microscopy is employed to characterize the surface morphologies of the GaAs microtips. The results indicate that well-distributed microtips with high quality can be achieved using either SiO2 film deposited by magnetron sputtering or aluminium film prepared by vacuum evaporation as mask. (c) 2006 Elsevier B.V. All rights reserved.
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页码：16 / 19
页数：4
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