Spin field-effect transistor with electric control

被引：3
|
作者：
Gurzhi, R. N. [1 ]
Kalinenko, A. N. [1 ]
Kopeliovich, A. I. [1 ]
Yanovsky, A. V. [1 ]
机构：
[1] Natl Acad Sci Ukraine, B Verkin Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期
关键词：
conductors (electric); electron spin polarisation; field effect transistors; INJECTION; METAL; ANALOG;
D O I：
10.1063/1.3131823
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of spin polarization control in hybrid magnetic-nonmagnetic conductor structures have been considered. The concept of a transistor capable of generating and amplifying a spin-alternating signal has been proposed. The transistor principle is based on spatial separation of spin components and their control with electric gates in the "current-in-plane" hybrid magnetic-nonmagnetic conductor structure. This control is achieved through the effect of spin-electric signal transformation predicted in this study. Such transistor is feasible on the grounds of present-day materials and technologies.
引用
收藏
页数：6
相关论文
共 50 条
  • [41] Effects of magnetic fields on the Datta-Das spin field-effect transistor
    Sarkar, K.
    Aharony, A.
    Entin-Wohlman, O.
    Jonson, M.
    Shekhter, R., I
    PHYSICAL REVIEW B, 2020, 102 (11)
  • [42] A hole spin qubit in a fin field-effect transistor above 4 kelvin
    Leon C. Camenzind
    Simon Geyer
    Andreas Fuhrer
    Richard J. Warburton
    Dominik M. Zumbühl
    Andreas V. Kuhlmann
    Nature Electronics, 2022, 5 : 178 - 183
  • [43] A DIRECT GATE FIELD-EFFECT TRANSISTOR FOR THE MEASUREMENT OF DC ELECTRIC-FIELDS
    HORENSTEIN, MN
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) : 716 - 717
  • [44] Theory of the organic field-effect transistor
    Horowitz, G
    Hajlaoui, R
    Bourguiga, R
    Hajlaoui, M
    SYNTHETIC METALS, 1999, 101 (1-3) : 401 - 404
  • [45] Metal nanoparticle field-effect transistor
    1600, American Institute of Physics Inc. (114):
  • [46] A TIN OXIDE FIELD-EFFECT TRANSISTOR
    KLASENS, HA
    KOELMANS, H
    SOLID-STATE ELECTRONICS, 1964, 7 (09) : 701 - 702
  • [47] A ferroelectric semiconductor field-effect transistor
    Mengwei Si
    Atanu K. Saha
    Shengjie Gao
    Gang Qiu
    Jingkai Qin
    Yuqin Duan
    Jie Jian
    Chang Niu
    Haiyan Wang
    Wenzhuo Wu
    Sumeet K. Gupta
    Peide D. Ye
    Nature Electronics, 2019, 2 : 580 - 586
  • [48] Vertical tunnel field-effect transistor
    Bhuwalka, KK
    Sedlmaier, S
    Ludsteck, AK
    Tolksdorf, A
    Schulze, J
    Eisele, I
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (02) : 279 - 282
  • [49] Junctionless multigate field-effect transistor
    Lee, Chi-Woo
    Afzalian, Aryan
    Akhavan, Nima Dehdashti
    Yan, Ran
    Ferain, Isabelle
    Colinge, Jean-Pierre
    APPLIED PHYSICS LETTERS, 2009, 94 (05)
  • [50] A ferroelectric semiconductor field-effect transistor
    Si, Mengwei
    Saha, Atanu K.
    Gao, Shengjie
    Qiu, Gang
    Qin, Jingkai
    Duan, Yuqin
    Jian, Jie
    Niu, Chang
    Wang, Haiyan
    Wu, Wenzhuo
    Gupta, Sumeet K.
    Ye, Peide D.
    NATURE ELECTRONICS, 2019, 2 (12) : 580 - 586
12345