Spin field-effect transistor with electric control

被引：3
|
作者：
Gurzhi, R. N. [1 ]
Kalinenko, A. N. [1 ]
Kopeliovich, A. I. [1 ]
Yanovsky, A. V. [1 ]
机构：
[1] Natl Acad Sci Ukraine, B Verkin Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期
关键词：
conductors (electric); electron spin polarisation; field effect transistors; INJECTION; METAL; ANALOG;
D O I：
10.1063/1.3131823
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of spin polarization control in hybrid magnetic-nonmagnetic conductor structures have been considered. The concept of a transistor capable of generating and amplifying a spin-alternating signal has been proposed. The transistor principle is based on spatial separation of spin components and their control with electric gates in the "current-in-plane" hybrid magnetic-nonmagnetic conductor structure. This control is achieved through the effect of spin-electric signal transformation predicted in this study. Such transistor is feasible on the grounds of present-day materials and technologies.
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页数：6
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