Spin field-effect transistor with electric control

被引：3

作者：

Gurzhi, R. N. ^{[1
]}

Kalinenko, A. N. ^{[1
]}

Kopeliovich, A. I. ^{[1
]}

Yanovsky, A. V. ^{[1
]}

机构：

[1] Natl Acad Sci Ukraine, B Verkin Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 10期

关键词：

conductors (electric); electron spin polarisation; field effect transistors; INJECTION; METAL; ANALOG;

D O I：

10.1063/1.3131823

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of spin polarization control in hybrid magnetic-nonmagnetic conductor structures have been considered. The concept of a transistor capable of generating and amplifying a spin-alternating signal has been proposed. The transistor principle is based on spatial separation of spin components and their control with electric gates in the "current-in-plane" hybrid magnetic-nonmagnetic conductor structure. This control is achieved through the effect of spin-electric signal transformation predicted in this study. Such transistor is feasible on the grounds of present-day materials and technologies.

引用

页数：6

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