A wide-band UV photodiode based on n-ZnO/p-Si heterojunctions

被引：119
|
作者：
Al-Hardan, N. H. [1 ]
Jalar, Azman [1 ]
Hamid, M. A. Abdul [2 ]
Keng, Lim Kar [2 ]
Ahmed, N. M. [3 ]
Shamsudin, R. [2 ]
机构：
[1] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelectron IMEN, Bangi 43600, Selangor, Malaysia
[2] Univ Kebangsaan Malaysia, Fac Sci &Technol, Bangi 43600, Selangor, Malaysia
[3] Univ Sains Malaysia, Sch Phys, George Town 11800, P Pinang, Malaysia
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2014年 / 207卷
关键词：
ZnO nanostructures; Heterojunction; UV photodiode; Hydrothermal; ELECTRICAL CHARACTERIZATION; OPTICAL-PROPERTIES; FABRICATION; PHOTOLUMINESCENCE; PHOTORESPONSE; NANOWIRES;
D O I：
10.1016/j.sna.2013.12.024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the fabrication of zinc oxide (ZnO) nanorods on p-type silicon (p-Si) photodiodes. The nanorods are prepared by low-temperature hydrothermal processing. The fabricated photodiodes exhibit an excellent rectifying ratio of 370 at 10 V. The responsivity to ultraviolet (UV) photons is stable at 0.29 A/W up to 300 nm, with a peak value of 0.38 A/W at 360 nm. Furthermore, the prepared photodiodes demonstrate visible blind behavior, indicating that ZnO nanorods grown on p-Si substrates can be used as UV photodiodes with visible blind responses. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：61 / 66
页数：6
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