A wide-band UV photodiode based on n-ZnO/p-Si heterojunctions

被引：119

作者：

Al-Hardan, N. H. ^{[1
]}

Jalar, Azman ^{[1
]}

Hamid, M. A. Abdul ^{[2
]}

Keng, Lim Kar ^{[2
]}

Ahmed, N. M. ^{[3
]}

Shamsudin, R. ^{[2
]}

机构：

[1] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelectron IMEN, Bangi 43600, Selangor, Malaysia

[2] Univ Kebangsaan Malaysia, Fac Sci &Technol, Bangi 43600, Selangor, Malaysia

[3] Univ Sains Malaysia, Sch Phys, George Town 11800, P Pinang, Malaysia

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2014年 / 207卷

关键词：

ZnO nanostructures; Heterojunction; UV photodiode; Hydrothermal; ELECTRICAL CHARACTERIZATION; OPTICAL-PROPERTIES; FABRICATION; PHOTOLUMINESCENCE; PHOTORESPONSE; NANOWIRES;

D O I：

10.1016/j.sna.2013.12.024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of zinc oxide (ZnO) nanorods on p-type silicon (p-Si) photodiodes. The nanorods are prepared by low-temperature hydrothermal processing. The fabricated photodiodes exhibit an excellent rectifying ratio of 370 at 10 V. The responsivity to ultraviolet (UV) photons is stable at 0.29 A/W up to 300 nm, with a peak value of 0.38 A/W at 360 nm. Furthermore, the prepared photodiodes demonstrate visible blind behavior, indicating that ZnO nanorods grown on p-Si substrates can be used as UV photodiodes with visible blind responses. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：61 / 66

页数：6

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