n-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition

被引：34

作者：

Kang, Hyemin ^{[1
]}

Park, Jusang ^{[1
]}

Choi, Taejin ^{[1
]}

Jung, Hanearl ^{[1
]}

Lee, Kwang H. ^{[2
]}

Im, Seongil ^{[2
]}

Kim, Hyungjun ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

ZNO; SILICON;

D O I：

10.1063/1.3679078

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679078]

引用

页数：4

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