Effects of annealing gas (N2, N2O, O2) on the characteristics of ZrSixOy/ZrO2 high-k gate oxide in MOS devices

被引：15
|
作者：
Kim, H. D. [1 ]
Jeong, S. -W. [1 ]
You, M. [1 ]
Roh, Y. [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
来源：
THIN SOLID FILMS | 2006年 / 515卷 / 02期
关键词：
high-k; ZrO2; ZrSixOy; interfacial layer;
D O I：
10.1016/j.tsf.2005.12.287
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the effects of annealing gas on the physical and electrical properties of ZrSixOy/ZrO2 high-k gate oxide. We found that the post oxidation annealing under oxidizing ambient (e.g., N2O or O-2) results in the additional interfacial oxide layer between silicate film and Si substrate, causing the degradation of equivalent oxide thickness (EOT) property. On the other hand, no clear evidence for the growth of interfacial oxide layer was observed if annealing was performed in N-2 ambient. Furthermore, we found that N-2 annealing effectively annihilates the defect center in ZrSixOy/ZrO2 layer. Therefore, we suggest that annealing in N-2 ambient is necessary to improve the characteristics of ZrSixOy/ZrO2 high-k gate oxide. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：522 / 525
页数：4
相关论文
共 50 条
  • [1] A study on interface layer with annealing conditions of ZrO2/ZrSixOy high-k gate oxide
    Kim, H. -D.
    Roh, Y.
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 : S755 - S759
  • [2] Characteristics of high-k ZrO2 gate dielectrics on O2/N2O plasma treated Si0.69Ge0.3C0.01/Si heterolayers
    Mahapatra, R
    Maikap, S
    Dhar, A
    Mathur, BK
    Ray, SK
    [J]. FERROELECTRICS, 2005, 329 : 1005 - 1009
  • [3] Role of surface defects in activation of O2 and N2O on ZrO2 and yttrium-stabilized ZrO2
    Zhu, JJ
    Albertsma, S
    van Ommen, JG
    Lefferts, L
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (19): : 9550 - 9555
  • [4] Effects of annealing on tantalum pentoxide films in N2 and N2O gas environments
    Houng, MP
    Wang, YH
    Horng, JH
    Huang, RC
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (08): : 5079 - 5084
  • [5] Effects of annealing on tantalum pentoxide films in N2 and N2O gas environments
    Houng, Mau-Phon
    Wang, Yeong-Her
    Horng, Jui-Hong
    Huang, Rui-Chang
    [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2001, 40 (08): : 5079 - 5084
  • [6] LOW-FLOW N2O/O2 AND N2/O2 CIRCLE SYSTEMS
    WEATHERILL, D
    SPENCE, AA
    [J]. BRITISH JOURNAL OF ANAESTHESIA, 1987, 59 (07) : P929 - P929
  • [7] HfOxNy and HfSixOyNz high-k layers deposited by MOCVD in mixed gas flows of N2O and O2
    Zhao, C
    Van Elshocht, S
    Conard, T
    Xu, Z
    Richard, O
    Caymax, M
    De Gendt, S
    Heyns, M
    [J]. PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II, 2004, 2003 (22): : 101 - 111
  • [8] Characterization of CuO supported on tetragonal ZrO2 catalysts for N2O decomposition to N2
    Liu, Z
    Amiridis, MD
    Chen, Y
    [J]. JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (03): : 1251 - 1255
  • [9] Superior decomposition of N2O into N2 and O2 in a fast discharge flow of N2O/He or N2O/Ar mixtures
    Tsuji, M
    Tanoue, T
    Tanaka, A
    Nakano, K
    Hamagami, T
    Nishimura, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (12B): : L1330 - L1333
  • [10] Middle atmospheric sources of nitrous oxide (N2O):: O2(B) and N2(A) chemistry
    Prasad, SS
    Zipf, EC
    [J]. PHYSICS AND CHEMISTRY OF THE EARTH PART C-SOLAR-TERRESTIAL AND PLANETARY SCIENCE, 2000, 25 (03): : 213 - 222
12345