Effects of annealing gas (N2, N2O, O2) on the characteristics of ZrSixOy/ZrO2 high-k gate oxide in MOS devices

被引：15
|
作者：
Kim, H. D. [1 ]
Jeong, S. -W. [1 ]
You, M. [1 ]
Roh, Y. [1 ]
机构：
[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
来源：
THIN SOLID FILMS | 2006年 / 515卷 / 02期
关键词：
high-k; ZrO2; ZrSixOy; interfacial layer;
D O I：
10.1016/j.tsf.2005.12.287
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the effects of annealing gas on the physical and electrical properties of ZrSixOy/ZrO2 high-k gate oxide. We found that the post oxidation annealing under oxidizing ambient (e.g., N2O or O-2) results in the additional interfacial oxide layer between silicate film and Si substrate, causing the degradation of equivalent oxide thickness (EOT) property. On the other hand, no clear evidence for the growth of interfacial oxide layer was observed if annealing was performed in N-2 ambient. Furthermore, we found that N-2 annealing effectively annihilates the defect center in ZrSixOy/ZrO2 layer. Therefore, we suggest that annealing in N-2 ambient is necessary to improve the characteristics of ZrSixOy/ZrO2 high-k gate oxide. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：522 / 525
页数：4
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