15.12% Silicon thin film solar cell on P++ c-Si substrate prepared by RTCVD

被引：0

作者：

Li, XD ^{[1
]}

Xu, Y ^{[1
]}

Wang, WJ ^{[1
]}

Shen, H ^{[1
]}

Zhao, YW ^{[1
]}

Ma, BK ^{[1
]}

机构：

[1] Beijing Solar Energy Res Inst, Beijing 100083, Peoples R China

来源：

PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C | 2003年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The thin film polycrystalline silicon solar cells have been fabricated on inactive P++ mono-crystalline silicon substrates by rapid thermal CVD technique. With the graphite boat covered by pyrogenative graphite layer, the quality of the growth layer has been increased. By varying the thickness of the active layer, the best result was obtained at the thickness of 37 mum with a 2 mum depth p(++) buffer layer deposited simultaneously. The fill factor could be improved by a suitable annealing in forming gas ambience. The best conversion efficiency of 15.12% (AM1.5G, 24.5 degreesC) has been achieved without cell's surface texture.

引用

页码：1279 / 1281

页数：3

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