Low temperature back-surface-field (BSF) technology for crystalline silicon (c-Si) thin film solar cells based on heterojunctions between boron-doped p-type hydrogenated amorphous silicon and c-Si

被引:0
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作者
Yamanaka, Mitsuyuki [1 ]
Sakata, Isao [1 ]
Shimokawa, Ryuichi [1 ]
Takato, Hidetaka [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, AIST Tsukuba Cent 2,1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan
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中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
We propose a low temperature back-surface field (BSF) technology for crystalline silicon (c-Si) thin film solar cells. The BSF structure has a heterojunction between a p-type c-Si substrate and a boron (B)-doped p-type hydrogenated amorphous silicon (a-Si:H) layer deposited on the back surface of the c-Si substrate at 200 degrees C. The back-surface recombination velocity, S-b, Of minority carriers can be reduced to less thap 1000 cm/s in this structure, while the value Of Sb is 10(6) cm/s when a B-doped p-type layer is epitaxially grown on the c-Si substrate. We have clarified, frorn internal hotoemission (IPE) and aftenuated-total-reflection ourier transform infrared (ATR-FTIR) spectroscopy measurements, that possible reasons for the observed low value of S-b are (1) the band lineup of the heterojunction (HJ) between B-doped p-type a-Si:H and c-Si and (2) the hydrogen passivation of defects in B-doped a-Si:H.
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页码:1421 / +
页数:2
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