High-Performance and Reliable Elevated-Metal Metal-Oxide Thin-Film Transistor for High-Resolution Displays

被引：0
|
作者：
Lu, Lei [1 ,2 ]
Li, Jiapeng [1 ]
Kwok, Hoi Sing [1 ,2 ]
Wong, Man [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
[2] Hong Kong Univ Sci & Technol, Inst Adv Study, Kowloon, Hong Kong, Peoples R China
来源：
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Incorporated with the annealing-induced source/drain (S/D), elevated-metal metal-oxide (EMMO) thin-film transistor (TFT) was proposed to provide an etch stop (ES) layer while retain a small device size for high resolution displays, which could not be combined in conventional TFT architectures. The "defect-populated" S/D and "defect-free" channel enabled the high performance metrics: a competitive field-effect mobility of similar to 14 cm(2)/Vs; an extremely low off-current of similar to 10(-18) A; an impressive on/off ratio of similar to 10(12); and the superior reliability against temperature, bias and current stresses.
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页数：4
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