Dependence of carrier localization in InGaN/GaN multiple-quantum wells on well thickness

被引：26

作者：

Na, Jong H.

Taylor, Robert A.

Lee, Kwan H.

Wang, Tao

Tahraoui, Abbes

Parbrook, Peter

Fox, A. Mark

Yi, Sam N.

Park, Young S.

Choi, Jae W.

Lee, Jung S.

机构：

[1] Univ Oxford, Dept Phys, Oxford OX1 3PU, England

[2] Univ Sheffield, Dept Elect & Elect Engn, EPSRC Natl Ctr 3 4 TEchnol, Sheffield S1 3JD, S Yorkshire, England

[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England

[4] Korea Maritime Univ, Dept Semicond Phys, Pusan 606791, South Korea

[5] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 110715, South Korea

[6] LG Elect Inst Technol, LED Lab, Seoul 137724, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2423232

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier localization in InGaN/GaN multiple-quantum wells (MQWs) with three different well thicknesses was investigated optically using time-integrated and time-resolved microphotoluminescence spectroscopy. An anomalous temperature dependence of the photoluminescence peak energy was observed, as a consequence of local potential fluctuations. The carrier localization was more prominent in the case of MQWs with wide well thickness. The results indicate that the degree of potential fluctuation increases with increasing well thickness. Emission from quantum-dot-like states only became apparent in MQWs with wide well thickness, which supports the assertion that carrier localization in InGaN/GaN MQWs is due to the formation of quantum dots. (c) 2006 American Institute of Physics.

引用

页数：3

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