Kondo effect in magnetic tunnel junctions

被引：21
|
作者：
Lee, K. I.
Joo, S. J.
Lee, J. H.
Rhie, K. [1 ]
Kim, Tae-Suk
Lee, W. Y.
Shin, K. H.
Lee, B. C.
LeClair, P.
Lee, J. -S.
Park, J. -H.
机构：
[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136792, South Korea
[2] Korea Univ, Dept Display & Semicond Phys, Chungnam 339700, South Korea
[3] Inha Univ, Dept Phys, Inchon 402751, South Korea
[4] Univ Alabama, MINT Ctr, Tuscaloosa, AL 35487 USA
[5] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 10期
关键词：
D O I：
10.1103/PhysRevLett.98.107202
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature T-K=20-30 K.
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页数：4
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