Kondo effect in magnetic tunnel junctions

被引：21

作者：

Lee, K. I.

Joo, S. J.

Lee, J. H.

Rhie, K. ^{[1
]}

Kim, Tae-Suk

Lee, W. Y.

Shin, K. H.

Lee, B. C.

LeClair, P.

Lee, J. -S.

Park, J. -H.

机构：

[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 136792, South Korea

[2] Korea Univ, Dept Display & Semicond Phys, Chungnam 339700, South Korea

[3] Inha Univ, Dept Phys, Inchon 402751, South Korea

[4] Univ Alabama, MINT Ctr, Tuscaloosa, AL 35487 USA

[5] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.98.107202

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tunneling magnetoresistance was found to be suppressed with decreasing temperature for magnetic tunnel junctions (MTJs) oxidized under high plasma power. A strong temperature dependence of the junction resistance was observed, along with zero-bias anomalies of dynamic resistance at low temperatures. Resistance shows a logarithmic dependence on temperature, and resistance versus temperature exhibits a scaling behavior. Our experimental data can be explained in a consistent way by the Kondo effect in the MTJs with the Kondo temperature T-K=20-30 K.

引用

页数：4

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