Science and Technology of Piezoelectric/Diamond Heterostructures for Monolithically Integrated High Performance MEMS/NEMS/CMOS Devices

被引：0

作者：

Auciello, O. ^{[1
,2
]}

Sumant, A. V. ^{[2
]}

Hiller, J. ^{[3
]}

Kabius, B. ^{[3
]}

Ma, Z. ^{[4
]}

Srinivasan, S. ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, 9700 S Cass Ave, Argonne, IL 60439 USA

[2] Argonne Natl Lab, Ctr Nanoscale Mat, 9700 S Cass Ave, Argonne, IL 60439 USA

[3] Argonne Natl Lab, Ctr Electron Microscopy, 9700 S Cass Ave, Argonne, IL 60439 USA

[4] Univ Wisconsin, Dept Elect Engn, Madison, WI 53706 USA

来源：

2008 17TH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the fundamental and applied science performed to integrate piezoelectric PbZrxTi1-xO3 and AlN films with a novel mechanically robust ultranano crystalline diamond layer to enable a new generation of low voltage / high-performance piezoactuated hybrid piezoelectric/diamond MEMS/NEMS devices.

引用

页码：241 / +

页数：2

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