Science and Technology of Piezoelectric/Diamond Heterostructures for Monolithically Integrated High Performance MEMS/NEMS/CMOS Devices

被引：0
|
作者：
Auciello, O. [1 ,2 ]
Sumant, A. V. [2 ]
Hiller, J. [3 ]
Kabius, B. [3 ]
Ma, Z. [4 ]
Srinivasan, S. [1 ]
机构：
[1] Argonne Natl Lab, Div Mat Sci, 9700 S Cass Ave, Argonne, IL 60439 USA
[2] Argonne Natl Lab, Ctr Nanoscale Mat, 9700 S Cass Ave, Argonne, IL 60439 USA
[3] Argonne Natl Lab, Ctr Electron Microscopy, 9700 S Cass Ave, Argonne, IL 60439 USA
[4] Univ Wisconsin, Dept Elect Engn, Madison, WI 53706 USA
来源：
2008 17TH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the fundamental and applied science performed to integrate piezoelectric PbZrxTi1-xO3 and AlN films with a novel mechanically robust ultranano crystalline diamond layer to enable a new generation of low voltage / high-performance piezoactuated hybrid piezoelectric/diamond MEMS/NEMS devices.
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页码：241 / +
页数：2
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