Determination of energy band gap of nanocrystalline SbSI using diffuse reflectance spectroscopy

被引：273

作者：

Nowak, M. ^{[1
]}

Kauch, B. ^{[2
]}

Szperlich, P. ^{[1
]}

机构：

[1] Silesian Tech Univ, Inst Phys, PL-40019 Katowice, Poland

[2] Agr Univ SGGW, Dept Biophys, PL-02776 Warsaw, Poland

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2009年 / 80卷 / 04期

关键词：

antimony compounds; energy gap; ferroelectric semiconductors; nanowires; porous semiconductors; reflectivity; semiconductor materials; ELECTRONIC-STRUCTURE;

D O I：

10.1063/1.3103603

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Twelve methods of determining energy band gap (E-g) of semiconductors using diffuse reflectance spectroscopy have been applied in investigations of sonochemically produced antimony sulfoiodide (SbSI) consisting of nanowires. It has been proved that the best method of determining E-g is based on simultaneous fitting of many mechanisms of absorption to the spectral dependence of Kubelka-Munk function evaluated from the diffuse reflectance data. It allows determining the values of indirect forbidden E-g, the Urbach energy, and the constant absorption/scattering of the examined semiconductor.

引用

页数：3

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