Determination of energy band gap of nanocrystalline SbSI using diffuse reflectance spectroscopy

被引：273
|
作者：
Nowak, M. [1 ]
Kauch, B. [2 ]
Szperlich, P. [1 ]
机构：
[1] Silesian Tech Univ, Inst Phys, PL-40019 Katowice, Poland
[2] Agr Univ SGGW, Dept Biophys, PL-02776 Warsaw, Poland
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 2009年 / 80卷 / 04期
关键词：
antimony compounds; energy gap; ferroelectric semiconductors; nanowires; porous semiconductors; reflectivity; semiconductor materials; ELECTRONIC-STRUCTURE;
D O I：
10.1063/1.3103603
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Twelve methods of determining energy band gap (E-g) of semiconductors using diffuse reflectance spectroscopy have been applied in investigations of sonochemically produced antimony sulfoiodide (SbSI) consisting of nanowires. It has been proved that the best method of determining E-g is based on simultaneous fitting of many mechanisms of absorption to the spectral dependence of Kubelka-Munk function evaluated from the diffuse reflectance data. It allows determining the values of indirect forbidden E-g, the Urbach energy, and the constant absorption/scattering of the examined semiconductor.
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页数：3
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