By means of high-temperature scanning tunneling microscopy, the authors present a direct observation on the dynamic behavior and phase transition of magic Al clusters on Si(111)-7x7 surfaces at high temperature. When the temperature is above 500 degrees C, fast diffusion of magic Al clusters on Si(111)-7x7 surfaces occurs while the magic cluster phase transforms into root 3x root 3-Al phase on downterraces (the downstep side of a terrace). From an Arrhenius plot, the activation energy of magic Al clusters on Si(111)-7x7 surfaces was extracted to be 2.0 +/- 0.3 eV. This study supplies important information for understanding the formation and phase transition process of magic Al nanoclusters on Si(111)-7x7 surfaces. (c) 2006 American Institute of Physics.
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Natl Inst Adv Ind Sci & Technol, MIRAI Project, Area Semicond Res Ctr, Tsukuba, Ibaraki 3058562, JapanNatl Inst Adv Ind Sci & Technol, MIRAI Project, Area Semicond Res Ctr, Tsukuba, Ibaraki 3058562, Japan
Uchida, N
Bolotov, L
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Natl Inst Adv Ind Sci & Technol, MIRAI Project, Area Semicond Res Ctr, Tsukuba, Ibaraki 3058562, JapanNatl Inst Adv Ind Sci & Technol, MIRAI Project, Area Semicond Res Ctr, Tsukuba, Ibaraki 3058562, Japan
Bolotov, L
Miyazaki, T
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Natl Inst Adv Ind Sci & Technol, MIRAI Project, Area Semicond Res Ctr, Tsukuba, Ibaraki 3058562, JapanNatl Inst Adv Ind Sci & Technol, MIRAI Project, Area Semicond Res Ctr, Tsukuba, Ibaraki 3058562, Japan
Miyazaki, T
Kanayama, T
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Natl Inst Adv Ind Sci & Technol, MIRAI Project, Area Semicond Res Ctr, Tsukuba, Ibaraki 3058562, JapanNatl Inst Adv Ind Sci & Technol, MIRAI Project, Area Semicond Res Ctr, Tsukuba, Ibaraki 3058562, Japan