Dynamic behavior and phase transition of magic Al clusters on Si(111)-7x7 surfaces

被引:14
|
作者
Li, Run-Wei
Owen, J. H. G.
Kusano, S.
Miki, K.
机构
[1] Natl Inst Mat Sci, Int Ctr Young Sci, Tsukuba, Ibaraki 3050044, Japan
[2] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan
关键词
D O I
10.1063/1.2337522
中图分类号
O59 [应用物理学];
学科分类号
摘要
By means of high-temperature scanning tunneling microscopy, the authors present a direct observation on the dynamic behavior and phase transition of magic Al clusters on Si(111)-7x7 surfaces at high temperature. When the temperature is above 500 degrees C, fast diffusion of magic Al clusters on Si(111)-7x7 surfaces occurs while the magic cluster phase transforms into root 3x root 3-Al phase on downterraces (the downstep side of a terrace). From an Arrhenius plot, the activation energy of magic Al clusters on Si(111)-7x7 surfaces was extracted to be 2.0 +/- 0.3 eV. This study supplies important information for understanding the formation and phase transition process of magic Al nanoclusters on Si(111)-7x7 surfaces. (c) 2006 American Institute of Physics.
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页数:3
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