Measurement of 0.35 mu m laser imprint in a thin Si foil using an x-ray laser backlighter

被引：73

作者：

Kalantar, DH

Key, MH

DaSilva, LB

Glendinning, SG

Knauer, JP

Remington, BA

Weber, F

Weber, SV

机构：

[1] RUTHERFORD APPLETON LAB,CHILTON,ENGLAND

[2] UNIV OXFORD,OXFORD,ENGLAND

[3] UNIV ROCHESTER,LASER ENERGET LAB,ROCHESTER,NY 14627

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.76.3574

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Imprinted modulations in optical depth of a thin Si foil due to 0.35 mu m laser irradiation at about 3 x 10(12) W/cm(2) have been measured at shock breakout, These measurements were made by high resolution face-on radiography using a gain saturated yttrium x-ray laser backlighter operating at a wavelength of 15.5 nm with a multilayer optics imaging system. The imprinted modulation due to a static speckle pattern and a 0.29 and a 0.33 THz spectral dispersion smoothed speckle pattern were studied. Comparison of the imprinted modulation is made with simulations.

引用

页码：3574 / 3577

页数：4

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