Measurement of 0.35 mu m laser imprint in a thin Si foil using an x-ray laser backlighter

被引：73
|
作者：
Kalantar, DH
Key, MH
DaSilva, LB
Glendinning, SG
Knauer, JP
Remington, BA
Weber, F
Weber, SV
机构：
[1] RUTHERFORD APPLETON LAB,CHILTON,ENGLAND
[2] UNIV OXFORD,OXFORD,ENGLAND
[3] UNIV ROCHESTER,LASER ENERGET LAB,ROCHESTER,NY 14627
来源：
PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 19期
关键词：
D O I：
10.1103/PhysRevLett.76.3574
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Imprinted modulations in optical depth of a thin Si foil due to 0.35 mu m laser irradiation at about 3 x 10(12) W/cm(2) have been measured at shock breakout, These measurements were made by high resolution face-on radiography using a gain saturated yttrium x-ray laser backlighter operating at a wavelength of 15.5 nm with a multilayer optics imaging system. The imprinted modulation due to a static speckle pattern and a 0.29 and a 0.33 THz spectral dispersion smoothed speckle pattern were studied. Comparison of the imprinted modulation is made with simulations.
引用
收藏
页码：3574 / 3577
页数：4
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