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- [2] Determination of structure defects in Hg1-xCdxTe multilayer by TEM Hongwai Jishu/Infrared Technology, 20 (01): : 9 - 12
- [6] Origin of void defects in Hg1-xCdxTe grown by molecular beam epitaxy Zandian, M., 1600, Minerals, Metals & Materials Soc (TMS), Warrendale, PA, United States (24):