Defects of the crystal structure of Hg1-xCdxTe thin layer grown by pulsed laser deposition

被引:5
|
作者
Rudyj, IO
Kurilo, IV
Virt, IS
Sagan, P
Zawislak, J
Kuzma, M
机构
[1] Univ Rzeszow, Inst Phys, PL-35959 Rzeszow, Poland
[2] State Univ Lviv Polytech, UA-90646 Lvov, Ukraine
[3] Pedag Univ, Sect Expt Phys, UA-82100 Drogobych, Ukraine
[4] Univ Rzeszow, Inst Biotechnol, PL-35959 Rzeszow, Poland
关键词
thin films; crystal structure and symmetry; scanning and transmission electron microscopy;
D O I
10.1016/j.jallcom.2003.07.037
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin solid films of Hg1-xCdxTe on KCl substrate have been obtained by pulse laser deposition (PLD). The crystal structure of the films obtained has been investigated using electron diffraction methods (TED). The texture crystal structure of the films exhibits two inequivalent orientations of grains in the plane of the substrate. Electron diffraction patterns show on the plane defects of the layers caused by {1 1 1}-twinning. Under the right conditions such defects may lead to the growth of nanostructural grains. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:180 / 182
页数:3
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