A 0.3 THz VCO using gm-enhanced technology in 55 nm CMOS

被引：2

作者：

Fu, Haipeng ^{[1
]}

Song, Qi ^{[1
]}

Ma, Kaixue ^{[1
]}

机构：

[1] Tianjin Univ, Sch Microelect, Tianjin, Peoples R China

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2022年 / 64卷 / 06期

基金：

国家重点研发计划;

关键词：

55; nm-CMOS; gm-enhanced; THz; transformer-feedback; VCO; VOLTAGE-CONTROLLED OSCILLATOR; HIGH-EFFICIENCY; HIGH-POWER; DESIGN; MULTIPLIER;

D O I：

10.1002/mop.33255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A power combined terahertz (THz) voltage-controlled oscillator (VCO) is proposed to increase the output power. Based on the traditional transformer-feedback structure, a new negative conductance enhanced (gm-enhanced) technology is presented to enhance the start-up of the proposed THz VCO by adding additional transistors to offset the loss of the source inductance. In addition, a short transmission line is used as a zero-phase shifter to lock the three single-core VCOs for consistent frequency, phase, and amplitude. The fully integrated 300 GHz VCO design is fabricated in 55-nm complementary metal oxide semiconductor (CMOS) process. The measurement results show that by modulating the bias voltage of the transistors, the VCO can achieve a tuning range of 301.2-304.2 GHz with a maximum output power of -7.5 dBm. The chip area is only 554 mu m x 530 mu m.

引用

页码：1042 / 1047

页数：6

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