Large field-induced strain, giant strain memory effect, and high thermal stability energy storage in (Pb,La)(Zr,Sn,Ti)O3 antiferroelectric single crystal

被引:60
|
作者
Zhuo, Fangping [1 ]
Li, Qiang [1 ]
Zhou, Yaming [1 ]
Ji, Yongjie [1 ]
Yan, Qingfeng [1 ]
Zhang, Yiling [2 ]
Xi, Xiaoqing [2 ]
Chu, Xiangcheng [2 ]
Cao, Wenwu [3 ,4 ]
机构
[1] Tsinghua Univ, Dept Chem, Beijing 100084, Peoples R China
[2] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
[3] Harbin Inst Technol, Condensed Matter Sci & Technol Inst, Harbin 150080, Heilongjiang, Peoples R China
[4] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA
基金
中国国家自然科学基金;
关键词
Antiferroeletric single crystal; Field-induced strain; Strain memory; Energy storage; FERROELECTRIC PHASE-TRANSITION; ELECTRIC-FIELD; THIN-FILM; LEAD; CERAMICS; PERFORMANCE; DENSITY; DOMAIN;
D O I
10.1016/j.actamat.2018.01.021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
(Pb,La)(Zr,Sn,Ti)O-3 (PLZST) tetragonal antiferroeletric single crystals have been grown by conventional flux method. Phase structure, domain evolution, electric field-induced strain and energy storage properties of the as-grown PLZST crystals with [100] crystallographic orientation have been investigated systematically. A large electric field-induced strain up to 0.76% at 110 degrees C and a giant memory strain of 0.51% at 100 degrees C have been realized in the PLZST crystals. This field-induced strain has a nonlinear relationship with the square polarization, which simultaneously stems from the quadratic and higher order electrostrictions. Furthermore, a good thermal stability of energy storage performance with the recoverable energy variation less than 5% in a wide temperature window (105 degrees C) has been achieved. The combination of high strain and good thermal stability of energy storage wound make the PLZST crystals one of the most important candidates for high temperature electromechanical coupling and high reliability energy-storage devices. (C) 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:28 / 37
页数:10
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