Effect of excess PbO on the microstructures and electric field induced strain of Pb0.97La0.02(Zr0.63Sn0.26Ti0.11)O3 antiferroelectric ceramics

被引:3
|
作者
Zhang, Q. F. [1 ]
Xiao, Z. [1 ]
Wang, X. C. [1 ]
Yang, T. Q. [1 ]
Wang, J. F. [1 ]
Chen, S. C. [1 ]
Yao, X. [1 ]
机构
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
基金
中国国家自然科学基金; 中国博士后科学基金;
关键词
Antiferroelectric ceramics; excess PbO; microstructures; electric field induced strain; actuators; FERROELECTRIC PHASE-TRANSITION; BEHAVIOR; TEMPERATURE; LANTHANUM; FATIGUE;
D O I
10.1142/S1793604713500720
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Microstructures and electrical properties of (Pb0.97La0.02)(Zr0.63Sn0.26Ti0.11)O-3 (PLZST) antiferroelectric (AFE) ceramics with different PbO content were investigated in this study. X-ray diffraction analysis showed that with the increase of PbO amount, the stability of AFE phase reduced due to the decrease of lead vacancies. Besides, it was observed that the sintering properties could be improved by adding a small amount of PbO. Further, the electric field induced polarization and strain first increased, and then decreased with increasing PbO addition and they showed good frequency stability at low frequency. The maximum strain of 0.65% was obtained in the specimens with 8 mol% PbO content at the frequency 1 Hz. Both a high strain level and relatively good frequency stability in this composition can make a potential candidate for actuators applications over a wide-frequency working range.
引用
收藏
页数:4
相关论文
共 50 条
  • [1] High antiferroelectric stability and large electric field-induced strain in MnO2-doped Pb0.97La0.02(Zr0.63Sn0.26Ti0.11)O3 ceramics
    Zhang, Qingfeng
    Zhang, Yangyang
    Yang, Tongqing
    Yao, Xi
    [J]. JOURNAL OF INTELLIGENT MATERIAL SYSTEMS AND STRUCTURES, 2014, 25 (04) : 501 - 505
  • [2] Enhanced antiferroelectric stability and electric-field-induced strain properties in rare earth-modified Pb(Zr0.63Sn0.26Ti0.11) O3 ceramics
    Zhang, Qingfeng
    Yang, Tongqing
    Zhang, Yangyang
    Wang, Jinfei
    Yao, Xi
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (22)
  • [3] Fatigue of field-induced strain in antiferroelectric Pb0.97La0.02(Zr0.77Sn0.14Ti0.09)O3 ceramics
    Zhou, LJ
    Zimmermann, A
    Zeng, YP
    Aldinger, F
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2004, 87 (08) : 1591 - 1593
  • [4] Field-induced strain of Pb0.97La0.02(Zr0.72-xSn0.17+xTi0.11)O3 antiferroelectric ceramics near the MPB
    School of Rare Earths, University of Science and Technology of China, Hefei
    230026, China
    不详
    341119, China
    不详
    201800, China
    不详
    200050, China
    [J]. Ceram Int, 23 (50013-50019):
  • [5] Electric fatigue in antiferroelectric Pb0.97La0.02(Zr0.55Sn0.33Ti0.12)O3 ceramics induced by bipolar cycling
    Zhou, LJ
    Rixecker, G
    Zimmermann, A
    Aldinger, F
    [J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2006, 26 (06) : 883 - 889
  • [6] High energy efficiency nanodielectrics with relaxor ferroelectric polymer and antiferroelectric (Pb0.97La0.02) (Zr0.63Sn0.3Ti0.07)O3 ceramics
    Wang, Jian
    Xie, Yunchuan
    Chen, Chao
    Peng, Biyun
    Zhang, Ben
    Zhang, Zhicheng
    [J]. IET NANODIELECTRICS, 2021, 4 (04) : 171 - 178
  • [7] Energy Storage Properties of (Pb0.97La0.02)(Zr0.6Sn0.4)O3 Antiferroelectric Ceramics
    Zhang, Nan
    Zhang, Ji
    Wang, Yaojin
    [J]. Kuei Suan Jen Hsueh Pao/Journal of the Chinese Ceramic Society, 2024, 52 (04): : 1211 - 1216
  • [8] Large electric field-induced strain near AFE/FE phase boundary in (Pb0.97La0.02)(Zr, Sn, Ti)O3 system
    Q. F. Zhang
    T. Q. Yang
    J. F. Wang
    [J]. Journal of Materials Science, 2013, 48 : 6218 - 6222
  • [9] Large electric field-induced strain near AFE/FE phase boundary in (Pb0.97La0.02)(Zr, Sn, Ti)O3 system
    Zhang, Q. F.
    Yang, T. Q.
    Wang, J. F.
    [J]. JOURNAL OF MATERIALS SCIENCE, 2013, 48 (18) : 6218 - 6222
  • [10] Effect of temperature on phase transition behavior of antiferroelectric (Pb0.97La0.02 )(Zr0.75Sn0.25-xTix)O3 ceramics
    陈婷婷
    刘冰
    丑修建
    刘俊
    薛晨阳
    张文栋
    [J]. Journal of Semiconductors, 2014, 35 (03) : 20 - 23