In:Zn:LiNbO3 crystals doped with different indium concentrations were grown by Czochralski technique. The optical damage threshold value and ultraviolet-visible absorption spectra of the In:Zn:LiNbO3 crystals were measured. The In:Zn:LiNbO3 crystals were made into optical waveguide substrates using hexanedioic acid as proton exchange agent. The optical damage resistant ability of those optical waveguide substrates was investigated by the m-line method. The optical damage threshold values of In(2mol.%):Zn(3mol.%):LiNbO3 crystal and optical waveguide substrate are two orders of magnitude higher than those of pure LiNbO3. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, TashkentInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent
Utamuradova S.B.
Azamatov Z.T.
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Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, TashkentInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent
Azamatov Z.T.
Yuldoshev M.A.
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Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, TashkentInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent