Optical characterization of InAsN single quantum wells grown by RF-MBE

被引：10
|
作者：
Kuroda, M
Katayama, R
Onabe, K
Shiraki, Y
机构：
[1] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778562, Japan
[2] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2004年 / 241卷 / 12期
关键词：
D O I：
10.1002/pssb.200405032
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
InAsN/GaAs single quantum wells (SQWs) were fabricated on semi insulating GaAs(001) substrates by RF-MBE. The redshift of photoluminescence peak with increasing nitrogen content was observed. It is contrary to the recent report for the bulk dilute InAsN alloy where the blueshift of absorption edge has occurred predominantly due to the Burstein-Moss effect. Considering that the Burstein-Moss shift energy of the one-dimensional quantum well is significantly lower than that of the bulk, this redshift of photoluminescence peak suggests the huge bandgap bowing of InAsN alloy as commonly found in III-V-N type alloys.
引用
收藏
页码：2791 / 2794
页数：4
相关论文
共 50 条
  • [21] Microstructural Characterization of InN Growth Process by RF-MBE
    Araki T.
    Nakamura R.
    Goto N.
    Mouri S.
    Zairyo/Journal of the Society of Materials Science, Japan, 2024, 73 (04) : 351 - 355
  • [22] Growth and characterization of InN on sapphire substrate by RF-MBE
    Xiao, HL
    Wang, XL
    Wang, JX
    Zhang, NH
    Liu, HX
    Zeng, YP
    Li, JM
    Wang, ZG
    JOURNAL OF CRYSTAL GROWTH, 2005, 276 (3-4) : 401 - 406
  • [23] Homoepitaxial growth and luminescence characterization of GaN epilayer by RF-MBE on MOCVD-grown GaN substrate
    Kurai, S.
    Kubo, S.
    Okazaki, T.
    Manabe, S.
    Sugita, T.
    Kawabe, A.
    Yamada, Y.
    Taguchi, T.
    Physica Status Solidi (A) Applied Research, 1999, 176 (01): : 459 - 463
  • [24] Homoepitaxial growth and luminescence characterization of GaN epilayer by RF-MBE on MOCVD-grown GaN substrate
    Kurai, S
    Kubo, S
    Okazaki, T
    Manabe, S
    Sugita, T
    Kawabe, A
    Yamada, Y
    Taguchi, T
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 459 - 463
  • [25] ZnO epitaxial films grown by flux-modulated RF-MBE
    Hirano, Katsuya
    Fujita, Miki
    Sasajima, Masanori
    Kosaka, Tomohiro
    Horikoshi, Yoshiji
    JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) : 370 - 372
  • [26] Growth and characterization of InAsN alloy films and quantum wells
    Kuroda, M
    Nishikawa, A
    Katayama, R
    Onabe, K
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 254 - 258
  • [27] Characterization of photovoltaic cells using n-InN/p-Si grown by RF-MBE
    Morioka, C
    Yamaguchi, T
    Naoi, H
    Araki, T
    Suzuki, A
    Nanishi, Y
    GAN AND RELATED ALLOYS - 2003, 2003, 798 : 237 - 242
  • [28] MOVPE and characterization of InAsN/GaAs multiple quantum wells
    Kuboya, S.
    Thieu, Q. T.
    Ono, W.
    Nakajima, F.
    Katayama, R.
    Onabe, K.
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 (544-547) : 544 - 547
  • [29] Optical characterization of InGaAsP/InAlAsP multiple quantum wells grown by MBE for 1 μm wavelength region
    Yamamoto, T.
    Kayama, M.
    Kawamura, Y.
    2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
  • [30] Investigation of InN mole fraction fluctuation in InGaN films grown by RF-MBE
    Kimura, Takuya
    Fukumoto, Eita
    Yamaguchi, Tomohiro
    Wang, Ke
    Kaneko, Masamitsu
    Araki, Tsutomu
    Yoon, Euijoon
    Nanishi, Yasushi
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 5, 2011, 8 (05): : 1499 - 1502
12345