Homoepitaxial growth and luminescence characterization of GaN epilayer by RF-MBE on MOCVD-grown GaN substrate

被引：0

作者：

Kurai, S ^{[1
]}

Kubo, S ^{[1
]}

Okazaki, T ^{[1
]}

Manabe, S ^{[1
]}

Sugita, T ^{[1
]}

Kawabe, A ^{[1
]}

Yamada, Y ^{[1
]}

Taguchi, T ^{[1
]}

机构：

[1] Yamaguchi Univ, Fac Engn, Dept Elect & Elect Engn, Ube, Yamaguchi 7558611, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 176卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199911)176:1<459::AID-PSSA459>3.0.CO;2-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Homoepitaxial growth of GaN on MOCVD-grown GaN/sapphire substrate has been carried out by RF-MBE. The structural and optical properties of the homoepitaxial GaN layers have been investigated by comparing with those of heteroepitaxially-grown GaN by RF-MBE using atomic force microscopy, X-ray diffraction and photoluminescence measurements. From the results, the two-dimensional growth mode was thought to be dominant in homoepitaxial GaN. The A- and B-free exciton emissions are clearly observed in the temperature dependence of photoluminescence and reflectance spectra of the RF-MBE-grown homoepitaxial GaN.

引用

页码：459 / 463

页数：5

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Okazaki, T.
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Kawabe, A.
Yamada, Y.
Taguchi, T.
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