High Temperature Solution Growth on Free-standing (001) 3C-SiC Epilayers

被引：1

作者：

Tanaka, Ryo ^{[1
]}

Seki, Kazuaki ^{[1
]}

Ujihara, Toru ^{[1
]}

Takeda, Yoshikazu ^{[1
]}

机构：

[1] Nagoya Univ, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

3C-SiC; solution growth; dipping method; stacking faults; STACKING-FAULTS;

D O I：

10.4028/www.scientific.net/MSF.615-617.37

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700 degrees C. The seed crystal was prepared by a CVD method on the undulated Si substrate. 3C-SiC stably grew on the (001) seed crystal. However, dark stripes front the seed crystal to the grown crystal along {111} planes were clearly observed. The stripes were due to the high-density stacking faults extended from the stacking faults in the 3C-SiC epilayer that were induced during the CVD growth on Si Substrate.

引用

页码：37 / 40

页数：4

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