Optical and electrical characterization of free-standing 3C-SiC films grown on undulant 6in Si substrates

被引：0
|
作者：
Yamada, Toshimichi [1 ]
Itoh, Kohei M. [1 ]
机构：
[1] Department of Applied Physics and Physico-Informatics, Keio University, 3-14-1 Hiyoshi, Kohoku-ku, Yokohama 223-8522, Japan
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
D O I：
10.4028/www.scientific.net/msf.389-393.675
中图分类号：
学科分类号：
摘要：
Thin films
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页码：675 / 678
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