Analysis and Design of a Linear Digital Programmable Gain Amplifier in a 0.13 μm SiGe BiCMOS technology

被引：1

作者：

Du, Xuan-Quang ^{[1
]}

Knobloch, Anselm ^{[1
]}

Groezing, Markus ^{[1
]}

Buck, Matthias ^{[1
]}

Berroth, Manfred ^{[1
]}

机构：

[1] Univ Stuttgart, Inst Elect & Opt Commun Engn INT, Pfaffenwaldring 47, D-70569 Stuttgart, Baden Wurttembe, Germany

来源：

FREQUENZ | 2017年 / 71卷 / 3-4期

关键词：

high-frequency amplifier; high-speed integrated circuit; BiCMOS integrated circuit; programmable gain amplifier (PGA);

D O I：

10.1515/freq-2016-0213

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the analysis and the design of a fully-differential digital programmable gain amplifier ( PGA) in a 0.13 mu m BiCMOS technology. The PGA has a gain control range of 31 dB with 1 dB gain step size and consumes 284mW from a 3.6V power supply. At a maximum gain of 25 dB, the PGA exhibits a 3-dB bandwidth of 10.1 GHz. The measured gain error for all 32 possible gain settings is between -0.19/ +0.46 dB at 1 GHz. Up to 13 GHz the third harmonic distortion HD3 stays below -34 dB for all 32 gain settings at a differential output peak-to-peak voltage of 1V after the last amplifier stage.

引用

页码：143 / 150

页数：8

共 50 条

[41] 0.13 μm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
Avenier, Gregory
Diop, Malick
Chevalier, Pascal
Troillard, Germaine
Loubet, Nicolas
Bouvier, Julien
Depoyan, Linda
Derrier, Nicolas
Buczko, Michel
Leyris, Cedric
Boret, Samuel
Montusclat, Sebastien
Margain, Alain
Pruvost, Sebastien
Nicolson, Sean T.
Yau, Kenneth H. K.
Revil, Nathalie
Gloria, Daniel
Dutartre, Didier
Voinigescu, Sorin P.
Chantre, Alain
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2009, 44 (09) : 2312 - 2321
[42] 0.13-μm SiGe BiCMOS Technology with More-than-Moore Modules
Kaynak, M.
Wietstruck, M.
Goeritz, A.
Wipf, S. Tolunay
Inac, M.
Cetindogan, B.
Wipf, C.
Kaynak, C. Baristiran
Woehrmann, M.
Voges, S.
Braun, T.
2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2017, : 62 - 65
[43] 240 GHz RF-MEMS Switch in a 0.13 μm SiGe BiCMOS Technology
Wipf, S. Tolunay
Goeritz, A.
Wipf, C.
Wietstruck, M.
Burak, A.
Tuerkmen, E.
Guerbuez, Y.
Kaynak, M.
2017 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2017, : 54 - 57
[44] A 150GHz fT/fmax 0.13μm SiGe:C BiCMOS technology
Laurens, M
Martinet, B
Kermarrec, O
Campidelli, Y
Deléglise, F
Dutartre, D
Troillard, G
Gloria, D
Bonnouvrier, J
Beerkens, R
Rousset, V
Leverd, F
Chantre, A
Monroy, A
PROCEEDINGS OF THE 2003 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2003, : 199 - 202
[45] A 18-33 GHz Variable Gain Down-Conversion Mixer in 0.13μm SiGe:C BiCMOS technology
Ahmed, Syed Sharfuddin
Schumacher, Hermann
29TH AUSTROCHIP WORKSHOP ON MICROELECTRONICS (AUSTROCHIP), 2021, : 9 - 12
[46] 24-Bit 5.0 GHz Direct Digital Synthesizer RFIC With Direct Digital Modulations in 0.13 μm SiGe BiCMOS Technology
Geng, Xueyang
Dai, Fa Foster
Irwin, J. David
Jaeger, Richard C.
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (05) : 944 - 954
[47] Analysis and design of Colpitts VCO using 0.35 μm SiGe BiCMOS technology
Institute of RF- and OE-ICs, Southeast University, Nanjing 210096, China
Guti Dianzixue Yanjiu Yu Jinzhan, 2008, 1 (129-132+157):
[48] A 275 GHz Amplifier in 0.13 μm SiGe
Malz, Stefan
Hillger, Philipp
Heinemann, Bernd
Pfeiffer, Ullrich R.
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 185 - 188
[49] LOW POWER DIGITALLY VARIABLE GAIN AMPLIFIER TECHNIQUES BASED ON SIGE BICMOS TECHNOLOGY
Yeo, Kiat Seng
Kumar, Thangarasu Bharatha
Ma, Kaixue
2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2014,
[50] Design of a 40-GHz LNA in 0.13-mu m SiGe BiCMOS
Xu Leijun
Wang Zhigong
Li Qin
Zhao Yan
JOURNAL OF SEMICONDUCTORS, 2009, 30 (05)

← 1 2 3 4 5 →