Design of a 40-GHz LNA in 0.13-mu m SiGe BiCMOS

被引：1
|
作者：
Xu Leijun [1 ,2 ]
Wang Zhigong [1 ]
Li Qin [1 ]
Zhao Yan [1 ]
机构：
[1] Southeast Univ, Inst RF & OE ICs, Nanjing 210096, Jiangsu, Peoples R China
[2] Jiangsu Univ, Sch Elect & Informat Engn, Zhenjiang 212013, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 05期
关键词：
low-noise amplifier; BiCMOS; millimeter wave; coplanar waveguide; matching network;
D O I：
10.1088/1674-4926/30/5/055005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A low-noise amplifier (LNA) operated at 40 GHz is designed. An improved cascode configuration is proposed and the design of matching networks is presented. Short-circuited coplanar waveguides (CPWs) were used as inductors to achieve a high Q-factor. The circuit was fabricated in a 0.13-mu m SiGe BiCMOS technology with a transistor transit frequency f(T) of 103 GHz. The chip area is 0.21 mm(2) The LNA has one cascode stage with a-3 dB bandwidth from 34 to 44 GHz. At 40 GHz, the measured gain is 8.6 dB; the input return loss, S-11, is-16.2 dB; and the simulated noise figure is 5 dB. The circuit draws a current of only 3 mA from a 2.5 V supply.
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Design of a 40-GHz LNA in 0.13-μm SiGe BiCMOS
    徐雷钧
    王志功
    李芹
    赵衍
    半导体学报, 2009, 30 (05) : 82 - 85
  • [2] Design of a 240-GHz LNA in 0.13 μm SiGe BiCMOS Technology
    Najmussadat, Md
    Ahamed, Raju
    Varonen, Mikko
    Parveg, Dristy
    Tawfik, Yehia
    Halonen, Kari A., I
    2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2021, : 17 - 20
  • [3] 80 Gb/s 2 : 1 multiplexer in 0.13-mu m SiGe BiCMOS technology
    Zhao Yan
    Wang Zhigong
    Li Wei
    JOURNAL OF SEMICONDUCTORS, 2009, 30 (02)
  • [4] A 5∼14GHz Wideband LNA using 0.13μm SiGe BiCMOS Technology
    He, Weipeng
    Li, Zhiqun
    Yao, Yan
    Xue, Yongbin
    Luo, Lei
    Cheng, Guoxiao
    PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUITS, TECHNOLOGIES AND APPLICATIONS (ICTA 2018), 2018, : 59 - 60
  • [5] 10 to 40 GHz Superheterodyne Receiver Frontend in 0.13 μm SiGe BiCMOS Technology
    Abdeen, Hebat-Allah Yehia
    Yuan, Shuai
    Schumacher, Hermann
    Ziegler, Volker
    Meusling, Askold
    Feldle, Peter
    2016 GERMAN MICROWAVE CONFERENCE (GEMIC), 2016, : 341 - 344
  • [6] 10 to 40 GHz Superheterodyne Receiver Frontend in 0.13 μm SiGe BiCMOS Technology
    Abdeen, Hebat-Allah Yehia
    Yuan, Shuai
    Schumacher, Hermann
    Ziegler, Volker
    Meusling, Askold
    Feldle, Peter
    FREQUENZ, 2017, 71 (3-4) : 151 - 160
  • [7] A 0.13-μm SiGe BiCMOS LNA for 24-GHz Automotive Short-Range Radar
    Ragonese, E.
    Scuderi, A.
    Palmisano, G.
    2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, 2008, : 680 - +
  • [8] A 6∼18GHz Ultra-Wideband LNA Using 0.13μm SiGe BiCMOS Technology
    He, Weipeng
    Li, Zhiqun
    Yao, Yan
    Xue, Yongbin
    Li, Qin
    2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 243 - 245
  • [9] A 0.13-μm SiGe BiCMOS LNA for 24-GHz Automotive Short-Range Radar
    Ragonese, E.
    Scuderi, A.
    Palmisano, G.
    2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 510 - +
  • [10] A 110 GHz LNA with 20 dB Gain and 4 dB Noise Figure in an 0.13 μm SiGe BiCMOS Technology
    Ulusoy, A. Cagri
    Kaynak, Mehmet
    Valenta, Vaclav
    Tillack, Bernd
    Schumacher, Hermann
    2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS), 2013,
12345