Design of a 40-GHz LNA in 0.13-mu m SiGe BiCMOS

被引：1
|
作者：
Xu Leijun [1 ,2 ]
Wang Zhigong [1 ]
Li Qin [1 ]
Zhao Yan [1 ]
机构：
[1] Southeast Univ, Inst RF & OE ICs, Nanjing 210096, Jiangsu, Peoples R China
[2] Jiangsu Univ, Sch Elect & Informat Engn, Zhenjiang 212013, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 05期
关键词：
low-noise amplifier; BiCMOS; millimeter wave; coplanar waveguide; matching network;
D O I：
10.1088/1674-4926/30/5/055005
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A low-noise amplifier (LNA) operated at 40 GHz is designed. An improved cascode configuration is proposed and the design of matching networks is presented. Short-circuited coplanar waveguides (CPWs) were used as inductors to achieve a high Q-factor. The circuit was fabricated in a 0.13-mu m SiGe BiCMOS technology with a transistor transit frequency f(T) of 103 GHz. The chip area is 0.21 mm(2) The LNA has one cascode stage with a-3 dB bandwidth from 34 to 44 GHz. At 40 GHz, the measured gain is 8.6 dB; the input return loss, S-11, is-16.2 dB; and the simulated noise figure is 5 dB. The circuit draws a current of only 3 mA from a 2.5 V supply.
引用
收藏
页数：4
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