V-band MMIC low-noise amplifier design based on distributed active device model

被引：0
|
作者：
Jang, BJ [1 ]
Yom, IB [1 ]
Etri, SPL [1 ]
机构：
[1] ETRI, Yusong Gu, Taejon, South Korea
来源：
APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A V-band two stage MMIC low-noise amplifier using 0.15um pHEMT based on a distributed active device model has been designed. This model is successful on constructing the equivalent circuit of HEMT that cannot be scaled from a standard HEMT model. An MMIC amplifier based on the distributed model and careful EM simulation exhibits a maximum gain of 9.6dB and a minimum noise figure of 3.6dB at 61GHz. This results indicate that the distributed HEMT model is effective for the design V-band MMIC low noise amplifiers.
引用
收藏
页码：25 / 28
页数：4
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