Design and fabrication of a low-noise amplifier for the V-band

被引：0
|
作者：
Kang, TS [1 ]
Lee, SD [1 ]
Lee, BH [1 ]
Kim, SD [1 ]
Park, HC [1 ]
Park, HM [1 ]
Rhee, JK [1 ]
机构：
[1] Dongguk Univ, Millimeter Wave Innovat Technol Res Ctr, Seoul 100715, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2002年 / 41卷 / 04期
关键词：
V-band; MIMIC; CPW; LNA; low noise; high gain; GaAs;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Millimeter-wave monolithic integrated circuit (MIMIC)-based V-band low-noise amplifiers (LNA) were fabricated using high-performance 0.1-mu Gamma-shaped pseudomorphic high electron mobility transistors (PHEMT's), coplanar waveguide structures, and an integrated process for passive and active devices. The LNA was designed in a chip size of 2.3 x 1.4 mm(2) by using 2-stage PHEMT's with two 70-mum fingers. A high S-21 gain of 14.9 dB and good matching at 60 GHz were achieved from the circuits, and a 20-dBm IP3 and 6.7-dB NFmin were obtained from the LNA's.
引用
收藏
页码：533 / 538
页数：6
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