Cryogenic MMIC Low-Noise Amplifiers for V-band

被引：0
|
作者：
Varonen, Mikko [1 ,2 ]
Samoska, Lorene [3 ]
Kangaslahti, Pekka [3 ]
Fung, Andy [3 ]
Gawande, Rohit [3 ]
Soria, Mary [3 ]
Peralta, Alejandro [3 ]
Lin, Robert [3 ]
Lai, Richard [4 ]
Mei, Xiaobing [4 ]
Sarkozy, Stephen [4 ]
机构：
[1] Aalto Univ, Espoo, Finland
[2] VTT Tech Res Ctr Finland, Espoo, Finland
[3] CALTECH, Jet Prop Lab, Pasadena, CA 91125 USA
[4] Northrop Grumman Corp, Redondo Beach, CA USA
来源：
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2017年
基金：
芬兰科学院;
关键词：
Cryogenic; InP HEMT; low-noise amplifiers; MMIC;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50-75 GHz). The amplifier chips were fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP HEMT technology and packaged in WR15 waveguide housings utilizing alumina E-plane waveguide probes. The amplifier modules achieve 18 to 27 K noise temperatures from 50 to 75 GHz when cryogenically cooled to 21 K. When measured through a mylar vacuum window, a cascade of two amplifier modules achieves a receiver noise temperature of 18.5 K at 58 GHz. A second chain has a measured receiver noise temperature between 20 to 28 K for the whole V-band. To the best of authors' knowledge, these are the lowest LNA noise temperatures for V-Band reported to date.
引用
收藏
页码：172 / 175
页数：4
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