Dual-Gate HEMT Parameter Extraction Based on 2.5D Multiport Simulation of Passive Structures

被引：0
|
作者：
van Raay, Friedbert [1 ]
Quay, Ruediger [1 ]
Schwantuschke, Dirk [1 ]
Ohlrogge, Matthias [1 ]
Peschel, Detlef [1 ]
Schlechtweg, Michael [1 ]
Ambacher, Oliver [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany
来源：
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年
关键词：
dual-gate HEMT; cascode HEMT; parasitic elements; parameter extraction;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new versatile parasitic network extraction method for microwave dual-gate and cascode HEMTs is presented which is based on 2.5D EM simulation of the passive metallization structures. After port count reduction and offset capacitance correction at the internal FET reference planes, a scalable matrix shell model is obtained. The intrinsic FET model is extracted from a separate characterization of a common-source FET. The matrix shell model is compared to a fully distributed model and to measured S-parameters for AlGaN/GaN HEMTs with a gate length of 0.1 mu m.
引用
收藏
页码：241 / 244
页数：4
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