Resistive Switching Characteristics of Hydrogen Peroxide Surface Oxidized ZnO-based Transparent Resistive Memory Devices

The impact of hydrogen peroxide treatment on the surface of ZnO film used for transparent resistive memory device application has been investigated. The surface oxidation was conducted by immersing the ZnO film into a hydrogen peroxide solution. Switching characteristics of as-deposited and surface-treated devices were initiated by bipolar electroformed programming. Based on our previous result, superior memory performance can be achieved when the bipolar forming process is initiated to activate the switching behavior. However, in this experiment, such bipolar forming process cannot be performed on the as-deposited device. Interestingly, after hydrogen peroxide surface treatment, the device is able to perform a successful bipolar forming, thus, shows a distinct switching characteristic. Consequently, memory performance of surface treated device exhibits good endurance as compared to the as-deposited device. This study offers a novel and simple method to enhance switching performance of the transparent resistive memory devices.