Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

被引：0

作者：

赵建伟 ^{[1
]}

刘凤娟 ^{[1
]}

孙建 ^{[1
]}

黄海琴 ^{[1
]}

胡佐富 ^{[1
]}

张希清 ^{[1
]}

机构：

[1] Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Opto-electronic Technology, Beijing Jiaotong University

来源：

Chinese Optics Letters | 2012年 / 10卷 / 01期

基金：

中国国家自然科学基金;

关键词：

ZnO; Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices; Pt;

D O I：

暂无

中图分类号：

TP333.8 [随机存取存贮器];

学科分类号：

081201 ;

摘要：

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.

引用

页码：78 / 81

页数：4

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