Trading off transient fault tolerance and power consumption in deep submicron (DSM) VLSI circuits

被引:48
|
作者
Maheshwari, A [1 ]
Burleson, W
Tessier, R
机构
[1] Univ Massachusetts, Dept Elect & Comp Engn, Interconnect Circuit Design Grp, Amherst, MA 01003 USA
[2] Univ Massachusetts, Reconfigurable Comp Grp, Dept Elect & Comp Engn, Amherst, MA 01003 USA
关键词
fault sensitivity estimation; fault-tolerance techniques; low-power techniques; transient fault model;
D O I
10.1109/TVLSI.2004.824302
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
High fault tolerance for transient faults and lowpower consumption are key objectives in the design of critical embedded systems. Systems like smart cards, PDAs, wearable computers, pacemakers, defibrillators, and other electronic gadgets must not only be designed for fault tolerance but also for ultra-low-power consumption due to limited battery life. In this paper, a highly accurate method of estimating fault tolerance in terms of mean time to failure (mTTF) is presented. The estimation is based on circuit-level simulations (HSPICE) and uses a double exponential current-source fault model. Using counters, it is shown that the transient fault tolerance and power dissipation of low-power circuits are at odds and allow for a power fault-tolerance tradeoff. Architecture and circuit level fault tolerance and low-power techniques are used to demonstrate and quantify this tradeoff. Estimates show that incorporation of these techniques results either in a design with an MTTF of 36 years and power consumption of 102 muW or a design with an MTTF of 12 years and power consumption of 20 muW. Depending on the criticality of the system and the power budget, certain techniques might be preferred over others, resulting in either a more fault tolerant or a lower power design, at the sacrifice of the alternative objective.
引用
收藏
页码:299 / 311
页数:13
相关论文
共 50 条
  • [21] Approaches for reducing power consumption in VLSI bus circuits
    Asada, Kunihiro
    Ikeda, Makoto
    Komatsu, Satoshi
    IEICE Transactions on Electronics, 2000, E83-C (02) : 153 - 160
  • [22] Low Cost Rollback to Improve Fault-Tolerance in VLSI Circuits
    Bonnoit, Thierry
    Zergainoh, Nacer-Eddine
    Nicolaidis, Michael
    Velazco, Raoul
    2017 IEEE 8TH LATIN AMERICAN SYMPOSIUM ON CIRCUITS & SYSTEMS (LASCAS), 2017,
  • [23] Evaluating and improving transient error tolerance of CMOS digital VLSI circuits
    Zhao, Chong
    Dey, Sujit
    2006 IEEE INTERNATIONAL TEST CONFERENCE, VOLS 1 AND 2, 2006, : 814 - +
  • [24] Lower bounds on energy dissipation and noise-tolerance for deep submicron VLSI
    Hegde, R
    Shanbhag, NR
    ISCAS '99: PROCEEDINGS OF THE 1999 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOL 6: CIRCUITS ANALYSIS, DESIGN METHODS, AND APPLICATIONS, 1999, : 334 - 337
  • [25] Trading off rate and power consumption in DSL systems
    Guenach, M.
    Nuzman, C.
    Maes, J.
    Peeters, M.
    2009 IEEE GLOBECOM WORKSHOPS, 2009, : 476 - 480
  • [26] Leakage Power Reduction Techniques in Deep Submicron Technologies for VLSI Applications
    Priya, M. Geetha
    Baskaran, K.
    Krishnaveni, D.
    INTERNATIONAL CONFERENCE ON COMMUNICATION TECHNOLOGY AND SYSTEM DESIGN 2011, 2012, 30 : 1163 - 1170
  • [27] Dynamic Power Estimation for Deep Submicron Circuits with Process Variation
    Quang Dinh
    Chen, Deming
    Wong, Martin D. F.
    2010 15TH ASIA AND SOUTH PACIFIC DESIGN AUTOMATION CONFERENCE (ASP-DAC 2010), 2010, : 577 - 582
  • [28] Intelligent robustness insertion for optimal transient error tolerance improvement in VLSI circuits
    Zhao, Chong
    Zhao, Yi
    Dey, Sujit
    IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2008, 16 (06) : 714 - 724
  • [29] Peak Noise And Noise Width Modelling For RLC Global Interconnects in Deep Submicron VLSI Circuits
    Maheshwari, V.
    Khare, Kapil
    Mukherjee, Suvra
    Kar, R.
    Mandal, D.
    2013 IEEE CONFERENCE ON INFORMATION AND COMMUNICATION TECHNOLOGIES (ICT 2013), 2013, : 321 - 326
  • [30] Impact of unrealistic worst case modeling on the performance of VLSI circuits in deep submicron CMOS technologies
    IEEE
    不详
    不详
    不详
    IEEE Trans Semicond Manuf, 4 (396-402):