Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

被引：51
|
作者：
Imura, M.
Nakano, K.
Kitano, T.
Fujimoto, N.
Okada, N.
Balakrishnan, K.
Iwaya, M.
Kamiyama, S.
Amano, H.
Akasaki, I.
Shimono, K.
Noro, T.
Takagi, T.
Bandoh, A.
机构：
[1] Meijo Univ, Fac Sci & Technol, COE Program Century 21, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Ibiden Co Ltd, Ceram Operat, Gifu 5038503, Japan
[3] Showa Denko Co Ltd, Corp R&D Ctr, Midori Ku, Chiba 2760056, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 07期
关键词：
D O I：
10.1002/pssa.200565401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thick AlN layers with atomically flat surfaces were successfully grown directly on sapphire substrates by metal-organic vapor phase epitaxy at high temperatures between 1300 degrees C and 1600 degrees C. Dislocations such as those of the edge, screw and mixed types exhibited different behaviors in the AlN epilayers. The dislocation density of AlN was less than 2 x 10(9) cm(-2). Free and bound excitons of AlN were observed with peak energies of 6.084 eV and 6.063 eV, respectively. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1626 / 1631
页数：6
相关论文
共 50 条
  • [31] Effect of High-Temperature Nitridation and Buffer Layer on Semi-Polar (10-13) AlN Grown on Sapphire by HVPE
    Zhang, Qian
    Li, Xu
    Zhao, Jianyun
    Sun, Zhifei
    Lu, Yong
    Liu, Ting
    Zhang, Jicai
    [J]. MICROMACHINES, 2021, 12 (10)
  • [32] Strain evolution in GaN layers grown on high-temperature AlN interlayers
    Wang, J. F.
    Yao, D. Z.
    Chen, J.
    Zhu, J. J.
    Zhao, D. G.
    Jiang, D. S.
    Yang, H.
    Liang, J. W.
    [J]. APPLIED PHYSICS LETTERS, 2006, 89 (15)
  • [33] Effect of High-temperature Annealing on AlN Crystal Grown by PVT Method
    Yu Ruixian
    Wang Guodong
    Wang Shouzhi
    Hu Xiaobo
    Xu Xiangang
    Zhang Lei
    [J]. JOURNAL OF INORGANIC MATERIALS, 2023, 38 (03) : 343 - 349
  • [34] Comparison of the microstructure of AlN films grown by MOCVD and by PLD on sapphire substrates
    Li, YX
    SalamancaRiba, L
    Talyan, V
    Venkatesan, T
    Wongchigul, C
    Zhou, P
    Tang, X
    Spencer, MG
    [J]. III-V NITRIDES, 1997, 449 : 453 - 458
  • [35] Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing
    Miyake, Hideto
    Lin, Chia-Hung
    Tokoro, Kenta
    Hiramatsu, Kazumasa
    [J]. JOURNAL OF CRYSTAL GROWTH, 2016, 456 : 155 - 159
  • [36] Influence of AlN thickness on strain evolution of GaN layer grown on high-temperature AlN interlayer
    Liu, W.
    Wang, J. F.
    Zhu, J. J.
    Jiang, D. S.
    Yang, H.
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (17) : 5252 - 5255
  • [37] Fabrication and characterization of high-temperature AlN thick-film piezoelectric accelerometer
    Lv, Ting
    Pelenovich, Vasiliy O.
    Xu, Chang
    Zeng, Xiaomei
    Hou, Dongyang
    Xiong, Zechang
    Yang, Bing
    Dong, Fang
    Liu, Sheng
    [J]. Ceramics International, 2024, 50 (22) : 47008 - 47016
  • [38] High-temperature growth of AlN in a production scale 11x2" MOVPE reactor
    Brunner, F.
    Protzmann, H.
    Heuken, M.
    Knauer, A.
    Weyers, M.
    Kneissl, M.
    [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1799 - +
  • [39] Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing
    Zhao, Lu
    Yang, Kun
    Ai, Yujie
    Zhang, Lian
    Niu, Xiaolong
    Lv, Hongrui
    Zhang, Yun
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (16) : 13766 - 13773
  • [40] High temperature HVPE of AlN on sapphire templates
    Baker, Troy
    Mayo, Ashley
    Veisi, Zeinab
    Lu, Peng
    Schmitt, Jason
    [J]. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4): : 373 - 376
12345