Strain evolution in GaN layers grown on high-temperature AlN interlayers

被引：38
|
作者：
Wang, J. F. [1 ]
Yao, D. Z.
Chen, J.
Zhu, J. J.
Zhao, D. G.
Jiang, D. S.
Yang, H.
Liang, J. W.
机构：
[1] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1063/1.2360900
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The strain evolution of the GaN layer grown on a high-temperature AlN interlayer with GaN template by metal organic chemical vapor deposition is investigated. It is found that the layer is initially under compressive strain and then gradually relaxes and transforms to under tensile strain with increasing film thickness. The result of the in situ stress analysis is confirmed by x-ray diffraction measurements. Transmission electron microscopy analysis shows that the inclination of edge and mixed threading dislocations rather than the reduction of dislocation density mainly accounts for such a strain evolution. (c) 2006 American Institute of Physics.
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